
©2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
2
TVS Diode Arrays (SPA
®
Diodes)
Revision: July 17, 2013
SP3006 Series
Low Capacitance ESD Protection - SP3006 Series
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
Peak Current (t
p
=8/20μs) 2.0 A
T
OP
Operating Temperature -40 to 125 °C
T
STOR
Storage Temperature -55 to 150 °C
Thermal Information
Parameter Rating Units
Storage Temperature Range -55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature
(Soldering 20-40s)
260 °C
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Breakdown Voltage V
BR
I
R
=5mA 9.0 V
Reverse Standoff Voltage V
RWM
I
R
≤ 1µA 6 V
Reverse Leakage Current I
LEAK
V
R
=5V 0.5 µA
Clamp Voltage
1
V
C
I
PP
=1A, t
p
=8/20µs, Fwd 12.5 V
I
PP
=2A, t
p
=8/20µs, Fwd 15.0 V
ESD Withstand Voltage
1
V
ESD
IEC61000-4-2 (Contact) ±8 kV
IEC61000-4-2 (Air) ±15 kV
Diode Capacitance
1
C
I/O-I/O
Reverse Bias=0V 0.5 pF
Note: 1. Parameter is guaranteed by design and/or device characterization.
Capacitance vs. Reverse Voltage
0.0
1.0
0.2
0.4
0.6
0.8
1.2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DC Bias (V)
Capacitance (pF)
Pulse Waveform
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0. 05.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
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